Semiconductor devices including bipolar transistors, CMOS transistors and DMOS transistors, and methods of manufacturing the same

摘要

Semiconductor devices having a bipolar transistor, a CMOS transistor, a drain extension MOS transistor and a double diffused MOS transistor are provided. The semiconductor device includes a semiconductor substrate including a logic region in which a logic device is formed and a high voltage region in which a high power device is formed, trenches in the semiconductor substrate, isolation layers in respective ones of the trenches, and at least one field insulation layer disposed at a surface of the semiconductor substrate in the high voltage region. Related methods are also provided.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including a logic region in which a logic device is formed and a high voltage region in which a high power device is formed; trenches in the semiconductor substrate; isolation layers in respective ones of the trenches; and at least one field insulation layer disposed at a surface of the semiconductor substrate in the high voltage region, wherein the at least one field insulation layer is a local oxidation of silicon (LOCOS) layer that includes a first portion extending into the semiconductor substrate and a second portion upwardly protruding from a top surface of the semiconductor substrate; wherein the first portion of the field insulation layer has a first thickness corresponding to about 40% of a total thickness of the field insulation layer; wherein the second portion of the field insulation layer has a second thickness corresponding to about 60% of the total thickness of the field insulation layer.