| 发明名称 | Infrared sensor | ||
| 摘要 | An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost surface that forms a light receiving surface for infrared rays, and a cavity formed to a shape dug in from a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolates the pyroelectric element from the semiconductor substrate. | ||
| 申请公布号 | US8809980(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201112929969 | 申请日期 | 2011.02.28 |
| 申请人 | Rohm Co., Ltd. | 发明人 | Nakatani Goro |
| 分类号 | H01L31/18;G01J5/02;G01J5/08;G01J5/34 | 主分类号 | H01L31/18 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. An infrared sensor comprising: a semiconductor substrate on which a pyroelectric sensor region, a thermopile region, and a logic circuit region are provided; a thin-film pyroelectric element made of lead titanate zirconate and disposed in the pyroelectric sensor region; a coating film coating the pyroelectric element and having a topmost surface forming a light receiving surface for infrared rays; a cavity in the semiconductor substrate and formed at a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolating the pyroelectric element from the semiconductor substrate; and a thermocouple disposed in the thermopile region, wherein the pyroelectric sensor region and the thermopile region are consolidated and formed in a central region of the semiconductor substrate so as to be surrounded by the logic circuit region. | ||
| 地址 | Kyoto JP | ||