Semiconductor device

摘要

Plural gate trenches are formed in the surface of an n-type drift region. A gate electrode is formed across a gate oxide film on the inner walls of the gate trenches. P-type base regions are selectively formed so as to neighbor each other in the gate trench longitudinal direction between neighboring gate trenches. An n-type emitter region is formed in contact with the gate trench in a surface layer of the p-type base regions. Also, a p-type contact region with a concentration higher than that of the p-type base region is formed in the surface layer of the p-type base region so as to be in contact with the gate trench side of the n-type emitter region. An edge portion on the gate trench side of the n-type emitter region terminates inside the p-type contact region.

主权项

1. A semiconductor device, characterized by including:
a first semiconductor layer formed of a first conductivity type semiconductor substrate; at least two trenches, formed in one main surface of the first semiconductor layer, arranged in parallel to each other in stripe form; a gate electrode formed across an insulating film in the trenches; a plurality of second conductivity type second semiconductor layers selectively formed in the longitudinal direction of the trench of the surface layer of the first semiconductor layer sandwiched between the trenches; a first conductivity type third semiconductor layer selectively formed in the surface layer of the second semiconductor layer; a second conductivity type fourth semiconductor layer, with an impurity concentration higher than that of the second semiconductor layer, selectively formed in the surface layer of the second semiconductor layer; an emitter electrode, formed on the one main surface of the first semiconductor substrate, in contact with the third semiconductor layer; a second conductivity type fifth semiconductor layer provided on the other main surface of the first semiconductor substrate; and a collector electrode in contact with the fifth semiconductor layer, wherein the third semiconductor layer is in contact with one trench of neighboring trenches, and distanced from the other trench, at least one portion of the edge portion on the other trench side of the third semiconductor layer terminates inside the fourth semiconductor layer, and the length of the fourth semiconductor layer in the longitudinal direction of the trench is greater than the length of the third semiconductor layer in the longitudinal direction of the trench.