| 发明名称 | Vertical stacking of graphene in a field-effect transistor | ||
| 摘要 | A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet. | ||
| 申请公布号 | US8809837(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201313971477 | 申请日期 | 2013.08.20 |
| 申请人 | International Business Machines Corporation | 发明人 | Farmer Damon B.;Franklin Aaron D.;Oida Sataoshi;Smith Joshua T. |
| 分类号 | H01L29/78;H01L21/336 | 主分类号 | H01L29/78 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A graphene field-effect transistor, comprising: a first graphene sheet; a first gate layer coupled to the first graphene sheet configured to influence an electric field within the first graphene7 sheet; at least one of a source and a drain formed on the first graphene sheet, wherein a top surface of the first gate layer is even with a top surface of the at least one of the source and the drain; and a second graphene sheet coupled to the top surface of the first gate layer and the top surface of the at least one of the source and drain opposite the first gate layer, wherein the first gate layer is configured to influence an electric field of the second graphene sheet. | ||
| 地址 | Armonk NY US | ||