Vertical BJT and SCR for ESD

摘要

An electrostatic discharge (ESD) protection device includes a well region formed from semiconductor material with a first doping type and a floating base formed from semiconductor material with a second doping type. The floating base is disposed vertically above the well region. The ESD also includes a first terminal receiving region formed from semiconductor material with a third doping type. The first terminal receiving region is disposed vertically above the floating base. The ESD further includes a second terminal receiving region. The second terminal receiving region is laterally spaced apart from the first terminal receiving region by silicon trench isolation (STI) region. In some embodiments, the second terminal receiving region is formed from semiconductor material with the third doping type to form a bipolar junction transmitter (BJT) or with a fourth doping type to form a silicon controlled rectifier (SCR).

主权项

1. An electrostatic discharge (ESD) protection device, comprising:
a well region formed from semiconductor material with a first doping type; a floating base formed from semiconductor material with a second doping type, the floating base disposed vertically above the well region; a first terminal receiving region formed from semiconductor material with a third doping type, the first terminal receiving region disposed vertically above the floating base; and a second terminal receiving region formed from semiconductor material with the third doping type, the second terminal receiving region in contact with the well region and laterally spaced apart from the first terminal receiving region by a silicon trench isolation (STI) region to form a bipolar junction transmitter (BJT).