| 摘要 |
<p>PURPOSE: A thin film deposition apparatus is provided to increase the uniformity of a thin film deposited on a substrate by uniformly supplying a processing gas onto the substrate. CONSTITUTION: A gas insertion hole(522) is formed on the center of an electrode(520). The top of a baffle plate(540) is coupled with the bottom of the electrode. A gas supply groove is formed on the center of the top of the baffle plate. A jetting plate(560) is arranged on the lower part of the baffle plate. A plurality of jetting holes(562) is formed on the jetting plate.</p> |
