| 摘要 |
To implement a normally-off condition, a power semiconductor device according to an embodiment includes a semiconductor layer which includes a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer, a source electrode and a drain electrode which are separated from each other on the semiconductor layer, a gate electrode which is arranged between the source electrode and the drain electrode, a first insulating layer which insulates the drain electrode and the semiconductor layer, and a doping region which is formed in a 2DEG in the semiconductor layer. At least parts of the doping region are vertically overlapped with the gate electrode and are doped with a p-type dopant. |
