| 摘要 |
<p>The present invention relates to a method of forming the hole patterns of a semiconductor device. According to an embodiment of the present invention, a method of forming the hole patterns of a semiconductor device includes: a step of forming an inner spacer which exposes a part of the upper surface of an upper buffer mask layer; a step of selectively exposing the first part of a lower patterning mask pattern; a step of exposing the second part of the lower patterning mask pattern; a step of removing a core insulating pattern, the inner spacer, and a patterning barrier pattern.</p> |
