| 摘要 |
Disclosed are an atomic layer deposition apparatus and an atomic layer deposition method. According to an embodiment of the present invention, the atomic layer deposition apparatus comprises: an atomic layer deposition chamber unit, where an opening for accessing a substrate is prepared, and a susceptor for supporting the susceptor is installed in an inside, for providing one either a raw material precursor or a reaction precursor for supplying a deposition material; a scanning cathode unit, which is installed in an inside of the atomic layer deposition chamber unit, for arranging the deposition material on top of each other in the substrate by discharging the other either a raw material precursor or a reaction precursor while being moved along the substrate; and a cathode driving unit, which is installed inside the atomic layer deposition chamber unit, for moving the scanning cathode unit. |
