发明名称 |
THROUGH SILICON VIA METALLIZATION |
摘要 |
<p>To achieve abovementioned things, and to meet the purpose of the present invention, a method of filling through silicon vias is provided. A dielectric layer is formed on the through silicon vias. A barrier layer including tungsten is deposited on the dielectric layer by CVD or ALD. The through silicon vias are filled with a conducive material.</p> |
申请公布号 |
KR20140100443(A) |
申请公布日期 |
2014.08.14 |
申请号 |
KR20140013171 |
申请日期 |
2014.02.05 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
NALLA PRAVEEN REDDY;TJOKRO NOVY SASTRAWATI;KOLICS ARTUR;VARADARAJAN SESHASAYEE |
分类号 |
H01L21/205;H01L21/28;H01L23/48 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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