| 摘要 |
The present invention relates to a CI(G)S thin film and a method for forming the same. More specifically, the present invention relates to a method for forming a CI(G)S thin film which improves an electro-optical property, productivity, cost reduction and process stability and a CI(G)S thin film manufactured by the method. According to the present invention, an indium layer or an indium-gallium layer, which has low copper content or no copper, between the CI(G)S thin film of a solar cell and molybdenum thin film interface is stacked, thereby completely removing carbon remaining on the CI(G)S thin film and the molybdenum thin film interface and improving the electro-optical property of the CI(G)S thin film. |
| 申请人 |
KOREA INSTITUTE OF ENERGY RESEARCH |
发明人 |
AHN, SE JIN;EO, YOUNG JOO;GWAK, JI HYE;YOON, KYUNG HOON;CHO, A RA;YUN, JAE HO;CHO, JUN SIK;AHN, SEOUNG KYU;SHIN, KEE SHIK;PARK, SANG HYUN;PARK, JOO HYUNG;YOO, JIN SU |
