发明名称 |
METHODS OF FORMING CONDUCTIVE STRUCTURES USING A SACRIFICIAL LINER LAYER |
摘要 |
One illustrative method disclosed herein includes performing a first etching process to define a via opening in a layer of insulating material, performing at least one process operation to form a sacrificial liner layer on the sidewalls of the via opening, performing a second etching process to define a trench in the layer of insulating material, wherein the sacrificial liner layer is exposed to the second etching process, after performing the second etching process, performing a third etching process to remove the sacrificial liner layer and, after performing the third etching process, forming a conductive structure in at least the via opening and the trench. |
申请公布号 |
US2014227872(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201313766898 |
申请日期 |
2013.02.14 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Zhang Xunyuan;LiCausi Nicholas V.;Ryan Errol Todd |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
performing a first etching process to define a via opening in a layer of insulating material, said via opening having sidewalls; performing at least one process operation to form a sacrificial liner layer on said sidewalls of said via opening; performing a second etching process on said layer of insulating material to define a trench in said layer of insulating material, wherein said sacrificial liner layer is exposed to said second etching process; after performing said second etching process, performing a third etching process to remove said sacrificial liner layer; and after performing said third etching process, forming a conductive structure in at least said via opening and said trench. |
地址 |
Grand Cayman KY |