发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS
摘要 In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable.
申请公布号 US2014226410(A1) 申请公布日期 2014.08.14
申请号 US201414258265 申请日期 2014.04.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAMURA Hiroshi;Imamiya Kenichi;Yamamura Toshio;Hosono Koji;Kawai Koichi
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
主权项 1. A nonvolatile semiconductor memory device comprising: a plurality of memory cells or a plurality of memory cell units each including a plurality of memory cells; and a memory cell array including the plurality of memory cells or the plurality of memory cell units, being arranged to form an array; wherein a first operation is performed in response to an input of a first command or an input of a first command sequence, and after the input of the first command or the input of the first command sequence, a first ready/busy signal goes from a ready state to a busy state in a first timing, and then the first ready/busy signal goes from a busy state to a ready state in a second timing before the first operation is completed, and the first operation includes an operation in which data stored in a selected memory cell included in the plurality of memory cells or the plurality of memory cell units is changed from first data to second data; wherein a second operation is performed in response to an input of a second command or an input of a second command sequence, and after the input of the second command or the input of the second command sequence, the first ready/busy signal goes from a ready state to a busy state in a third timing, and then the first ready/busy signal is kept to a busy state until the first operation is completed, and the second operation includes an operation in which data stored in a selected memory cell included in the plurality of memory cells or the plurality of memory cell units is changed from the first data to the second data; and wherein the first command is different from the second command, the first command sequence is different from the second command sequence, and the first data is different from the second data.
地址 Minato-ku JP