PHOTOELECTRIC CONVERSION ELEMENT

摘要

This photoelectric conversion element is characterized in being provided with a photoelectric conversion layer having: a p-type semiconductor layer; an n-type semiconductor layer; and a superlattice semiconductor layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer. The superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum layers are alternately and repeatedly layered, and the superlattice semiconductor layer is provided so that an intermediate energy band is formed between the upper end of the valence band of the barrier layer and the lower end of the conduction band of the barrier layer. The intermediate energy band is formed from a region of the superlattice semiconductor layer near the p-type semiconductor layer to a region of the superlattice semiconductor layer near the n-type semiconductor layer, and has a region having a large band width and a region having a small band width.