发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device having low cost and excellent characteristics, a method of manufacturing the same, and a semiconductor substrate.SOLUTION: A semiconductor device includes: a first-conductivity-type first semiconductor layer made from silicon carbide; and a second-conductivity-type second semiconductor layer made from silicon carbide, bonded to the first semiconductor layer, and including an electrically inactive element.</p>
申请公布号 JP2014146748(A) 申请公布日期 2014.08.14
申请号 JP20130015582 申请日期 2013.01.30
申请人 TOSHIBA CORP 发明人 NISHIO JOJI ; SHIMIZU TATSUO ; OTA CHIHARU ; SHINOHE TAKASHI
分类号 H01L29/868;H01L21/20;H01L21/265;H01L21/329;H01L21/336;H01L29/12;H01L29/78;H01L29/861 主分类号 H01L29/868
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