发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR SUBSTRATE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having low cost and excellent characteristics, a method of manufacturing the same, and a semiconductor substrate.SOLUTION: A semiconductor device includes: a first-conductivity-type first semiconductor layer made from silicon carbide; and a second-conductivity-type second semiconductor layer made from silicon carbide, bonded to the first semiconductor layer, and including an electrically inactive element.</p> |
申请公布号 |
JP2014146748(A) |
申请公布日期 |
2014.08.14 |
申请号 |
JP20130015582 |
申请日期 |
2013.01.30 |
申请人 |
TOSHIBA CORP |
发明人 |
NISHIO JOJI ; SHIMIZU TATSUO ; OTA CHIHARU ; SHINOHE TAKASHI |
分类号 |
H01L29/868;H01L21/20;H01L21/265;H01L21/329;H01L21/336;H01L29/12;H01L29/78;H01L29/861 |
主分类号 |
H01L29/868 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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