| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
A soldering method achieves little void and good joint condition in soldering an insulated circuit board and a semiconductor chip using a tin—high antimony solder material. A method of manufacturing a semiconductor device includes the steps of preparing a solder plate having a U-shape; mounting the solder plate on a substrate; mounting a semiconductor chip on the solder plate; fusing the solder plate in a reducing gas atmosphere; and reducing a pressure of the reducing gas atmosphere to a pressure lower than the atmospheric pressure when melting the solder plate. |
| 申请公布号 |
US2014224862(A1) |
申请公布日期 |
2014.08.14 |
| 申请号 |
US201414175339 |
申请日期 |
2014.02.07 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
MATSUSHITA Takeshi;MOCHIZUKI Eiji;NISHIZAWA Tatsuo;SAITO Shunsuke |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising the steps of:
preparing a solder plate having a U-shape; mounting the solder plate on a substrate; mounting a semiconductor chip on the solder plate; fusing the solder plate in a reducing gas atmosphere; and reducing a pressure of the reducing gas atmosphere to a pressure lower than an atmospheric pressure when melting the solder plate. |
| 地址 |
Kawasaki-shi JP |
