DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a diode which is excellent in a voltage withstanding characteristics and an oscillation characteristics and has a low loss.SOLUTION: In an Si wafer having a thickness from 340 to 380 μm, an n-buffer (nB) layer is formed by diffusing an n-type dopant having dosage of from 5×10to 1×10cmin a range of from 50 to 130 μm in depth.