| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows easily forming a depletion layer between trenches.SOLUTION: A semiconductor device includes: a first-conductivity-type drift layer; a second-conductivity-type base layer provided on the drift layer; first-conductivity-type source layers provided in the base layer; a plurality of trenches; gate electrodes being adjacent to the source layers and provided in the trenches via a first insulating film; and field plate electrodes provided under the gate electrodes in the trenches via a second insulating film having higher dielectric constant than the first insulating film. |
