| 摘要 |
The present invention is a substrate processing device which includes a chamber, a target support, substrate support, and electric filed generator placed in the chamber, and an induced electric field generator placed around the target support. A target is installed in the target support. A power generator is included in the electric field generator. The electric field generator forms first plasma between the target support and the substrate support by applying a voltage to the target. A magnetic core is included in the induced electric field generator. A wire connected to an RF power generator is wound on the magnetic core to receive high frequency power from the RF power generator so that a magnetic field is formed in the magnetic core. An electrical field is induced around the target by the magnetic field, and second plasma overlapped with the first plasma is formed by the induced electrical field. Suggested is the substrate processing device capable of stably depositing a thin film on a substrate placed on the substrate support by equally forming the plasma around the target by the overlapping of the plasma. |
