发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To achieve a semiconductor device which reduces the need for adjustment after a soldering process and reduces a disposal loss of the semiconductor device, and which has high productivity by inhibiting solder cracks or at least and substantially reducing a depth of the crack.SOLUTION: A semiconductor device according to the present embodiment comprises: an insulating substrate having a surface side conductive pattern and a rear face side conductive pattern; a power semiconductor element bonded to on the surface side conductive pattern of the insulating substrate; a heat spreader which includes an opposite region opposite to the insulating substrate and a crack region around at least a part of the opposite region, and to which the insulating substrate is bonded by a solder, in which solder cracks are produced in the crack region of the heat spreader during cooling time after soldering.
申请公布号 JP2014146644(A) 申请公布日期 2014.08.14
申请号 JP20130013137 申请日期 2013.01.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 ASAJI NOBUHIRO;SUDO SHINGO
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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