RESPONSE TO TAMPER DETECTION IN A MEMORY DEVICE

摘要

In response to a tamper-attempt indication, a memory device selectively disables one or more memory operations. Disabling can be accomplished by different techniques, including altering bias voltages associated with performing the memory operation, gating off a current needed for performing the memory operation, and limiting the needed current to a magnitude below the threshold magnitude required for the operation. After disabling the memory operation, a mock current can be generated. The mock current is intended to mimic the current normally expended during the memory operation when not disabled, thereby leading a user to believe that the device is continuing to operate normally even though the memory operation that is being attempted is not actually being performed.

主权项

1. A method comprising:
detecting a tamper-attempt indication corresponding to a memory device that includes an array of memory cells; and disabling a memory operation within the memory device based on the tamper-attempt indication received, wherein the disabling includes adjusting a voltage corresponding to circuitry on the memory device used in the memory operation such that the memory operation is disabled.