| 发明名称 |
PROCESSING APPARATUS, ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD |
| 摘要 |
A processing apparatus includes an end station configured to support thereon a workpiece, an ion beam generator and a scanning device. The ion beam generator is configured to generate an ion beam toward the end station. The scanning device is configured to scan the ion beam in a transverse scanning direction. The scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station. |
| 申请公布号 |
US2014227453(A1) |
申请公布日期 |
2014.08.14 |
| 申请号 |
US201313764260 |
申请日期 |
2013.02.11 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPAN |
发明人 |
WANG Shao-Hua;CHEN Ming-Te;LEE Sheng-Wei |
| 分类号 |
C23C14/48 |
主分类号 |
C23C14/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A processing apparatus, comprising:
an end station configured to support thereon a workpiece; an ion beam generator configured to generate an ion beam toward the end station; and a scanning device configured to scan the ion beam in a transverse scanning direction; wherein the scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station. |
| 地址 |
Hsinchu TW |
