发明名称 |
METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
Disclosed is a method for manufacturing a crystal silicon-based photoelectric conversion device. A crystalline-based silicon photoelectric conversion device of the present invention comprises: an intrinsic silicon-based layer of a first conductivity type layer-side and a silicon-based layer of a first conductivity type, in this order on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based layer of an opposite conductivity type layer-side and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the single-crystal silicon substrate of the first conductivity type. At least one of a step of forming the intrinsic silicon-based layer of first conductivity type layer-side and a step of forming the intrinsic silicon-based layer of opposite conductivity type layer-side includes the sub-steps in the following order: a step of forming a first intrinsic silicon-based thin-film layer having a thickness of 1 nm to 10 nm on the single-crystal silicon substrate of the first conductivity type by a plasma-enhanced CVD method; a step of plasma-treating the single-crystal silicon substrate of the first conductivity type, on which the first intrinsic silicon-based thin-film layer is formed thereon, in an atmosphere of a gas containing hydrogen as a main component; and a step of forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film layer by a plasma-enhanced CVD method. |
申请公布号 |
EP2624307(A4) |
申请公布日期 |
2014.08.13 |
申请号 |
EP20110828685 |
申请日期 |
2011.08.31 |
申请人 |
KANEKA CORPORATION |
发明人 |
YOSHIMI, MASASHI;ICHIKAWA, MITSURU;UTO, TOSHIHIKO;YAMAMOTO, KENJI |
分类号 |
H01L31/04;H01L31/068;H01L31/0747;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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