ELECTRIC POWER SEMICONDUCTOR DEVICE

摘要

An electric power semiconductor device according to an embodiment of the present invention includes a substrate, a semiconductor layer which includes a first semiconductor layer arranged on the substrate and a second semiconductor layer arranged on the first semiconductor layer, a source electrode and a drain electrode which are separated from each other on the semiconductor layer, and a gate electrode which is arranged in the form of a closed curve which surrounds the drain electrode and forms a first closed region.