LOGIC GATE AND A CORRESPONDING METHOD OF FUNCTION

摘要

A logic gate (1) comprising a spintronic memristor device (2), which has two spin-polarized magnetic electrodes (3, 4) for injecting and/or receiving a spin-polarized current and a layer of material (5) interposed between the two electrodes (3, 4) for transporting the spin-polarized current from one electrode to the other. The layer of material (5) is composed of a layer of organic semiconductor that is able to endow the spintronic memristor device (2) with at least two non-volatile electrical resistance states (RH, RL), each of which can be selected by applying a voltage to the electrodes (3, 4) that reaches or exceeds a respective voltage threshold (VT1, VT2) and, in at least a first resistance state (RH) of which, the spintronic memristor device (2) does not present a magnetoresistive effect.