发明名称 Delamination resistance of stacked dies in die saw
摘要 An integrated circuit structure includes a first die including TSVs; a second die over and bonded to the first die, with the first die having a surface facing the second die; and a molding compound including a portion over the first die and the second die. The molding compound contacts the surface of the second die. Further, the molding compound includes a portion extending below the surface of the second die.
申请公布号 US8803332(B2) 申请公布日期 2014.08.12
申请号 US201012831875 申请日期 2010.07.07
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lee Bo-I;Wang Tsung-Ding
分类号 H01L23/48;H01L23/52;H01L29/40;H01L23/02;H01L23/28;H01L21/00;H01L21/44 主分类号 H01L23/48
代理机构 Slater and Matsil, L.L.P. 代理人 Slater and Matsil, L.L.P.
主权项 1. An integrated circuit structure comprising: a first die comprising at least one through-substrate via (TSV), the first die further comprising a first surface and a second surface opposite the first surface, the second surface having at least one redistribution line disposed thereon, the at least one TSV extending from the at least one redistribution line through the first die and above the first surface; a second die over and bonded to the first die, the first surface of the first die spaced apart from and facing the second die, the second die in electrical contact with the at least one TSV; a molding compound comprising a portion over the first die and the second die, wherein the molding compound contacts the first surface of the first die, and wherein the molding compound comprises a first portion extending below the first surface of the first die and further comprises a bottom surface that is about level with the second surface of the first die; at least one connector different from the at least one TSV and disposed on the second surface of the first die; and a package substrate underlying and bonded to the first die by the at least one connector, wherein the molding compound is spaced apart from the package substrate.
地址 Hsin-Chu TW