发明名称 Method of forming a cooling device for an integrated circuit
摘要 A pump having: a cavity formed inside an insulating substrate, the upper part of the substrate being situated near the cavity having an edge; a conductive layer covering the inside of the cavity up to the edge and optionally covering the edge itself; a flexible membrane made of a conductive material placed above the cavity and resting against the edge; a dielectric layer covering the conductive layer or the membrane whereby insulating the portions of the conductive layer and of the membrane that are near one another; at least one aeration line formed in the insulating substrate that opens into the cavity via an opening in the conductive layer, and; terminals for applying a voltage between the conductive layer and the membrane.
申请公布号 US8804300(B2) 申请公布日期 2014.08.12
申请号 US201213436583 申请日期 2012.03.30
申请人 STMicroelectronics S.A. 发明人 Bouche Guillaume
分类号 H01G5/01 主分类号 H01G5/01
代理机构 Wolf, Greenfield & Sacks, P.C. 代理人 Wolf, Greenfield & Sacks, P.C.
主权项 1. A method for forming a pump in an integrated circuit, the method comprising: forming a cavity in a first insulating layer, the upper portion of the first insulating layer located in the vicinity of the cavity forming a border; covering the inside of the cavity all the way to the border and possibly the border with a first conductive layer; forming a first opening of the first conductive layer emerging into a ventilating duct previously formed in the first insulating layer; filling the cavity with a sacrificial portion; covering the sacrificial portion and the portion of the first conductive layer placed above the border with a second insulating layer and with a second conductive layer; forming a small second opening in the second conductive layer and in the second insulating layer; removing the sacrificial portion; and covering the second conductive layer with a third insulating layer to close back the small second opening.
地址 Montrouge FR