发明名称 |
Method of forming a cooling device for an integrated circuit |
摘要 |
A pump having: a cavity formed inside an insulating substrate, the upper part of the substrate being situated near the cavity having an edge; a conductive layer covering the inside of the cavity up to the edge and optionally covering the edge itself; a flexible membrane made of a conductive material placed above the cavity and resting against the edge; a dielectric layer covering the conductive layer or the membrane whereby insulating the portions of the conductive layer and of the membrane that are near one another; at least one aeration line formed in the insulating substrate that opens into the cavity via an opening in the conductive layer, and; terminals for applying a voltage between the conductive layer and the membrane. |
申请公布号 |
US8804300(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US201213436583 |
申请日期 |
2012.03.30 |
申请人 |
STMicroelectronics S.A. |
发明人 |
Bouche Guillaume |
分类号 |
H01G5/01 |
主分类号 |
H01G5/01 |
代理机构 |
Wolf, Greenfield & Sacks, P.C. |
代理人 |
Wolf, Greenfield & Sacks, P.C. |
主权项 |
1. A method for forming a pump in an integrated circuit, the method comprising:
forming a cavity in a first insulating layer, the upper portion of the first insulating layer located in the vicinity of the cavity forming a border; covering the inside of the cavity all the way to the border and possibly the border with a first conductive layer; forming a first opening of the first conductive layer emerging into a ventilating duct previously formed in the first insulating layer; filling the cavity with a sacrificial portion; covering the sacrificial portion and the portion of the first conductive layer placed above the border with a second insulating layer and with a second conductive layer; forming a small second opening in the second conductive layer and in the second insulating layer; removing the sacrificial portion; and covering the second conductive layer with a third insulating layer to close back the small second opening. |
地址 |
Montrouge FR |