发明名称 |
Method and system for calibrating exposure system for manufacturing of integrated circuits |
摘要 |
Method and system for calibrating exposure system for manufacturing of integrated circuits. According to an embodiment, the present invention provides a method for determining one or more focus parameters for an exposure system. As an example, the exposure system is used for forming patterns on semiconductor wafer. The method includes a step for providing a semiconductor wafer. The semiconductor wafer is characterized by a diameter. The method also includes a step for forming a plurality of patterns using the exposure system on the semiconductor wafer. As an example, each of the plurality of patterns being associated with a focus reference value (e.g., focus distance, focus angle, etc.). The method additionally includes a step for determining a plurality of shift profiles, and each of the shift profile is associated one of the plurality of patterns. |
申请公布号 |
US8804100(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US200912398143 |
申请日期 |
2009.03.04 |
申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
Fu Jiunhau;Tan Cher Huan |
分类号 |
G03B27/32;G03B27/52 |
主分类号 |
G03B27/32 |
代理机构 |
Kilpatrick Townsend & Stockton LLP |
代理人 |
Kilpatrick Townsend & Stockton LLP |
主权项 |
1. A method for determining one or more focus parameters for an exposure system, the exposure system being used in photolithographic processes in manufacturing integrated circuits, the method comprising:
forming a first plurality of patterns and a second plurality of patterns using the exposure system on a semiconductor wafer, each of the plurality of patterns being associated with one or more known focus parameters, wherein the first plurality of patterns is configured such that a focused portion thereof is shifted in a first direction when the exposure system is out of focus, and the second plurality of patterns is configured such that a focused portion thereof is shifted in a second direction opposite the first direction when the exposure system is out of focus; obtaining characteristics for each of the first plurality and the second plurality of patterns using an optical measuring device; and determining a focus position for the exposure system associated with a minimal relative shift, wherein forming the first plurality of patterns includes forming the following plurality of lines and spaces in an order along a first direction:
a first line having a width that is at a photoresist resolution line width limit;a first space having a width that is at a photoresist resolution spacing limit;a second line having a width that is at a line width for a critical photo step;a second space having a width that is at a normal photoresist spacing resolution;a third line having a width that is at a line width for a non-critical photo step;a third space having a width that is at a normal photoresist spacing resolution; anda fourth line having a width that is at a line width for a stable overlay measurement; wherein forming the second plurality of patterns includes forming said plurality of lines and spaces in an opposite order along the first direction. |
地址 |
Shanghai CN |