Through substrate via structures and methods of forming the same

摘要

The embodiments of forming a through substrate via (TSV) structure described enable reducing risk of damaging gate structures due to over polishing of an inter-level dielectric layer (ILD) layer. The TSV structure with a wider opening near one end also enables better gapfill.

主权项

1. A structure comprising:
a substrate; a through-substrate-via (TSV) extending into the substrate; a dielectric layer having a first portion that is formed over the substrate and a second portion that lines the TSV, wherein the first portion and the second portion comprise a same material; and a metal layer formed over the substrate, wherein the metal layer is embedded in the first portion of the dielectric layer, and wherein the second portion of the dielectric layer terminates at an upper surface inside the TSV, the upper surface below a lower surface of the metal layer, wherein the TSV extends over the upper surface of the second portion of the dielectric layer.