发明名称 |
Display apparatus and method of driving the same |
摘要 |
In a display apparatus having a plurality of pixel parts, each pixel part receives a data signal in response to a present gate signal and charges first and second pixel voltages having the same voltage level. A plurality of voltage controllers includes a level-down part to lower a voltage level of the second pixel voltage using a previous pixel voltage charged in a previous frame in response to a next gate signal and a level-up part to receive the lowered second pixel voltage in response to the next gate signal to boost up a voltage level of the first pixel voltage. |
申请公布号 |
US8803777(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US201313853481 |
申请日期 |
2013.03.29 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Do Hee-Wook;Park Seung-Beom;Kim Hoon;You Hye-Ran;Lu Jian Gang;Kim Hee-Seop;Yang Young-Chol;Lee Seoung-Hoon |
分类号 |
G09G3/36 |
主分类号 |
G09G3/36 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A display apparatus, comprising:
a first substrate; a first gate line disposed on the first substrate; a second gate line extending substantially parallel to the first gate line; a storage pattern disposed on the same layer as the first gate line and the second gate line; a data line crossing the first gate line and the second gate line; a first sub pixel electrode and a second sub pixel electrode disposed on the first substrate; a first thin film transistor comprising a first terminal connected to the first gate line, a second terminal connected to the data line, and a third terminal connected to the first sub pixel electrode; a second thin film transistor comprising a first terminal connected to the first gate line, a second terminal connected to the data line, and a third terminal connected to the second sub pixel electrode; a third thin film transistor comprising a first terminal connected to the second gate line, a second terminal connected to the second sub pixel electrode, and a third terminal connected to a first opposite electrode, the first opposite electrode overlapping with the storage pattern; and a fourth thin film transistor comprising a first terminal connected to the second gate line, a second terminal connected to the third terminal of the third thin film transistor, and a third terminal connected to a second opposite electrode overlapping with the first sub pixel electrode, wherein a width of the storage pattern is larger than a width of the first opposite electrode when measured along a line extending in a direction of the data line. |
地址 |
Yongin KR |