| 发明名称 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | ||
| 摘要 | Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours. | ||
| 申请公布号 | US8803198(B2) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201213483607 | 申请日期 | 2012.05.30 |
| 申请人 | Cree, Inc. | 发明人 | Smith Richard Peter;Sheppard Scott T.;Saxler Adam William;Wu Yifeng |
| 分类号 | H01L29/739;H01L31/072 | 主分类号 | H01L29/739 |
| 代理机构 | Myers Bigel Sibley & Sajovec | 代理人 | Myers Bigel Sibley & Sajovec |
| 主权项 | 1. A Group III Nitride based field effect transistor (FET) having a power degradation of less than about 3.0 dB when operated at from about 9.65 volts/μm to about 24 volts/μm for at least about 10 hours. | ||
| 地址 | Durham NC US | ||