System and method of testing through-silicon vias of a semiconductor die

摘要

A method includes contacting a first group of through-silicon vias (TSVs) contacts with a multi-contact probe and applying a first voltage value to each of the first group of TSV contacts via the multi-contact probe, where the first group of TSV contacts corresponds to a first group of TSVs. The method also includes determining, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV test result.

主权项

1. A method of testing through-silicon vias (TSVs) of a semiconductor die via TSV contacts external to the semiconductor die, the method comprising:
contacting a first group of TSV contacts with a multi-contact probe and applying a first voltage value to each of the first group of TSV contacts via the multi-contact probe, wherein the first group of TSV contacts corresponds to a first group of TSVs; and determining, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV test result, wherein the particular TSV is coupled to a bi-directional buffer circuit.