Variable resistance memory device and method of fabricating the same

摘要

According to an example embodiment, a variable resistance memory device includes a lower electrode that includes a spacer-shaped first sub lower electrode and a second sub lower electrode covering a curved sidewall of the first sub lower electrode. The second sub lower electrode extends upward to protrude above the top of the first sub lower electrode. The lower electrode includes an upward-tapered shape.

主权项

1. A variable resistance memory device, comprising:
a word line; a bit line crossing over the word line; a selection device between the word line and the bit line,
a lower electrode between the selection device and the bit line, the lower electrode including, a first sub lower electrode having an upward-tapered spacer shape, and a second sub lower electrode covering a sidewall of the first sub lower electrode and protruding above a top of the first sub lower electrode, and a variable resistance pattern between the lower electrode and the bit line.