发明名称 Light emitting device and manufacturing method of the same
摘要 The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
申请公布号 US8803418(B2) 申请公布日期 2014.08.12
申请号 US201313952863 申请日期 2013.07.29
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Seo Satoshi;Kuwabara Hideaki
分类号 H05B33/00 主分类号 H05B33/00
代理机构 Husch Blackwell LLP 代理人 Husch Blackwell LLP
主权项 1. A light emitting device comprising: a transistor supported by a first substrate; a wiring including an external input terminal; a first insulating film over the transistor; a first electrode over the first insulating film, wherein the first electrode is electrically connected to one of a source region and a drain region of the transistor; a light emitting layer over the first electrode; a second electrode over the light emitting layer; a second insulating film over the first electrode and the wiring; a second substrate over the first substrate so that the light emitting layer is located between the first substrate and the second substrate; and a sealing material formed between the first substrate and the second substrate in a region along peripheries of the first substrate and the second substrate, wherein the second insulating film includes an opening where the sealing material is in direct contact with the wiring, the opening being overlapped with the second substrate.
地址 JP