Method of fabricating a 3D integrated electronic device structure including increased thermal dissipation capabilities

摘要

A method of fabricating a microelectronic device structure including increased thermal dissipation capabilities. The structure including a three-dimensional (3D) integrated chip assembly that is flip chip bonded to a substrate. The chip assembly including a device substrate including an active device disposed thereon. A cap layer is physically bonded to the device substrate to at least partially define a hermetic seal about the active device. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.

主权项

1. A method comprising:
providing a three-dimensional (3D) integrated chip assembly, the method of providing the chip assembly comprising;
providing a device substrate having a first main surface and a second main surface, the device substrate including a plurality of input/output connections on at least one of the first main surface and the second main surface;disposing a MEMS relay comprising one or more heat generating elements on the device substrate;bonding a cap layer to the device substrate, the cap layer having a first main surface and a second main surface;disposing a sealing ring about the MEMS relay;forming a hermetic seal about the MEMS relay, the hermetic seal at least partially defined by the device substrate, the cap layer and the sealing ring and wherein the sealing ring is not in electrical communication with the MEMS relay and the device substrate; and providing a substrate including a plurality of input/output connections; and flip chip bonding the three-dimensional (3D) integrated chip assembly to the substrate to form an apparatus, wherein the apparatus provides a plurality of electrically and thermally conductive paths through the three-dimensional (3D) integrated chip assembly to dissipate heat generated within the apparatus and provide electrical connections to the MEMS relay.