发明名称 Laser diode and method of manufacturing the same
摘要 A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
申请公布号 US8802458(B2) 申请公布日期 2014.08.12
申请号 US201213348501 申请日期 2012.01.11
申请人 Sony Corporation 发明人 Nakashima Makoto;Yokoyama Takahiro;Karino Sachio
分类号 H01L33/36 主分类号 H01L33/36
代理机构 Dentons US LLP 代理人 Dentons US LLP
主权项 1. A method of manufacturing a laser diode comprising: a first step of forming on a semiconductor substrate, three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, the three or more strip-like ridge sections including at least a lower cladding layer, an active layer, and an upper cladding layer in this order from the semiconductor substrate side; a second step of forming a sacrificial layer that fills in at least an inside of the trench and that does not cover a whole top face of the ridge section, subsequently forming a wiring layer electrically connected to the upper cladding layer on the sacrificial layer according to needs, and forming a pad electrode electrically connected to the upper electrode through the wiring layer, in a region different from regions of both the ridge section and the trench; and a third step of removing the sacrificial layer.
地址 Tokyo JP