| 摘要 |
A vertical type light emitting device and a manufacturing method thereof are provided to improve a contact characteristic between a semiconductor layer and the metal by increasing a contact area between a semiconductor layer and a support layer. A first conductive semiconductor layer(2), a light emitting layer(3), and a second conductive semiconductor layer(4) are successively formed on the substrate. The step with the width which becomes narrow is formed in at least part of the upper side of the second conductive semiconductor layer. The step is covered by forming a first electrode(5) on the second conducive semiconductor layer. A support layer is formed on the first electrode. The first conductive semiconductor layer is exposed by separating the substrate. A second electrode(9) is formed on the exposed first conductive semiconductor layer. |
