发明名称 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS
摘要 There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film.
申请公布号 US2014218574(A1) 申请公布日期 2014.08.07
申请号 US201414246654 申请日期 2014.04.07
申请人 Sony Corporation 发明人 Yoshitsugu Kai
分类号 H01L27/146;H04N5/369 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid-state imaging device comprising: a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and which includes one or more layers; and a second film which is formed on the optical black region and which includes one or more layers, wherein the number of layers formed in the first film is different from the number of layers formed in the second film.
地址 Tokyo JP