发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation. |
申请公布号 |
US2014216345(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201414250783 |
申请日期 |
2014.04.11 |
申请人 |
Tokyo Electron Limited |
发明人 |
YAMAZAWA Yohei;KOSHIMIZU Chishio;SAITO Masashi;DENPOH Kazuki;YAMAWAKU Jun |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma processing apparatus comprising:
a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas into the processing chamber to perform a desired plasma process on the target substrate; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a variable resistor provided in a loop of the correction coil; and a resistance control unit for controlling a resistance of the variable resistor to a desired value. |
地址 |
Tokyo JP |