发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
申请公布号 US2014216345(A1) 申请公布日期 2014.08.07
申请号 US201414250783 申请日期 2014.04.11
申请人 Tokyo Electron Limited 发明人 YAMAZAWA Yohei;KOSHIMIZU Chishio;SAITO Masashi;DENPOH Kazuki;YAMAWAKU Jun
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma processing apparatus comprising: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas into the processing chamber to perform a desired plasma process on the target substrate; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a variable resistor provided in a loop of the correction coil; and a resistance control unit for controlling a resistance of the variable resistor to a desired value.
地址 Tokyo JP