| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element in which the interface state density at Ec-Et=0.4 eV is reduced to the order of 10cmeV, by clarifying the reduction method of nitride semiconductor-interface state of the insulating film interface, and to provide a manufacturing method therefor.SOLUTION: In a sealed nitride semiconductor element 1 including a storage container 12 internally having a sealable storage section 12c, and a nitride semiconductor element 11 stored in the storage section 12c while being sealed, the nitride semiconductor element 11 has a lamination structure of a nitride semiconductor layer 23 and an insulator layer 25, and the inside of the storage section 12c is a gas atmosphere containing Hgas. |
