| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor having structure enabling an organic semiconductor thin film to be formed on a flat surface and furthermore enabling the organic semiconductor thin film to be patterned into a desired pattern by defining a to-be-applied region.SOLUTION: Surfaces on a side opposite from a flexible base material 1, of a source electrode 3, a drain electrode 4, and a liquid-repellent insulating film 5 are flush with a flattened layer 2. An organic semiconductor thin film 6 is formed on the flat surface composed of the flattened layer 2, the source electrode 3, the drain electrode 4, and the liquid-repellent insulating film 5, by the direct writing method. Thereby, an excellent organic semiconductor thin film 6 having a good crystallinity and having continuity of a crystal film, can be obtained. |
