发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the aperture ratio is not reduced and which includes a capacitor with increased charge capacity, and also provide a semiconductor device in which the number of masks used in a manufacturing process is reduced and the manufacturing costs are reduced.SOLUTION: A pair of electrodes and a dielectric film constituting a capacitor are formed of a light-transmitting material. One of the pair of electrodes is made to function as an electrode by containing impurities in a light-transmitting semiconductor film. The other of the pair of electrodes constituting the capacitor is formed using a light-transmitting conductive film such as a pixel electrode and made to function as an electrode. Further, provided are a scan line, and a capacitor line that extends in a direction parallel with the scan line and provided on the same surface as the scan line. In insulating films over the capacitor line and the conductive film which can be formed in the formation of a source electrode or a drain electrode of a transistor, openings reaching the capacitor line and the conductive film are formed concurrently.</p>
申请公布号 JP2014142619(A) 申请公布日期 2014.08.07
申请号 JP20130263657 申请日期 2013.12.20
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;MIYAKE HIROYUKI
分类号 G09F9/30;G02F1/1368;H01L21/336;H01L21/822;H01L27/04;H01L29/786 主分类号 G09F9/30
代理机构 代理人
主权项
地址