| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is able to suppress degradation in semiconductor characteristics, due to stress concentration on a corner part of a recessed part, resulting from solder heat hysteresis, in a semiconductor chip having the recessed part, which is formed from a non-penetration V-shaped groove, in a semiconductor substrate.SOLUTION: The surface of an n-type wafer 1 has a p-type diffusion layer 31 of a grid pattern. The back of the n-type wafer 1 has a grid pattern of the same pitch as the grid pattern on the surface. A V-shaped groove 21b is provided. The V-shaped groove 21b has a bottom face, parallel to the back, from which the p-type diffusion layer 31 is exposed, and tapering side faces 9d extending from the bottom face. The back surrounded by the tapering side faces 9d has a p-type semiconductor layer. A p-type separation layer 4b that conductively connects the p-type diffusion layer 31 of the surface and the p-type semiconductor layer of the back is provided along the side faces 9d. In the V-shaped groove 21b, a portion near the intersection of a corner of each side face and the bottom face has a chamfered face. |
