VAPOR DEPOSITION REACTOR AND METHOD FOR FORMING THIN FILM

摘要

A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

主权项

1. A method for forming a thin film, comprising:
filling a first material in a first recess formed in a first portion of a vapor deposition reactor to a first pressure by providing the first material via at least one injection portion; receiving the first material in a second recess formed in a second portion of the vapor deposition reactor via the first recess, the second portion located adjacent to the first portion, the second recess having a height not greater than ⅔ of a width of the first recess; discharging the first material via a third recess communicatively connected to the second recess; and moving a portion of a substrate below the first recess, the second recess and the third recess.