MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a technology for achieving writing with high reliability in an MRAM of a domain wall displacement type.SOLUTION: A memory cell utilizes a domain wall displacement element 20. The domain wall displacement element 20 comprises: a recording layer 1; and magnetic field applying means 8. The recording layer 1 comprises: a first magnetization fixed region 2 in which the magnetization is fixed in a first direction perpendicular to a film plane of the recording layer; a second magnetization fixed region 3 in which the magnetization is fixed in a second direction antiparallel to the first direction; and a magnetization reversing region 4 in which the magnetization can be reversed to the first direction or the second direction. The magnetic field applying means 8 applies a magnetic field component in a third direction parallel to the film plane of the recording layer 1; the magnetization is reversed to a fourth direction as a result of the domain wall displacement of the magnetization reversing region 4 due to a first current flowing in a direction parallel to a film plane of the recording layer 1; then the magnetization of the magnetization reversing region is reversed to a fifth direction due to the first current and a magnetic field component in the third direction; and the third direction is determined so that the fourth direction and the fifth direction is parallel.