| 发明名称 |
Temperature Based Logic Profile for Variable Resistance Memory Cells |
| 摘要 |
A data storage device may generally be constructed and operated with at least one variable resistance memory cell having a first logic state threshold that is replaced with a second logic state threshold by a controller. The first and second logic states respectively corresponding to a predicted resistance shift that is based upon an operating temperature profile. |
| 申请公布号 |
US2014219003(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201313761975 |
申请日期 |
2013.02.07 |
| 申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
Ebsen David Scott;Khoueir Antoine;Trantham Jon D. |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. An apparatus comprising at least one variable resistance memory cell having a first logic state threshold replaced with a second logic state threshold by a controller, the first and second logic states corresponding to a predicted resistance shift based upon a logic profile. |
| 地址 |
Cupertino CA US |
