发明名称 |
BUFFER LAYER FOR HIGH PERFORMING AND LOW LIGHT DEGRADED SOLAR CELLS |
摘要 |
Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided. |
申请公布号 |
US2014217408(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201313760509 |
申请日期 |
2013.02.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Hong Augustin J.;Hopstaken Marinus J.;Kim Jeehwan;Ott John A.;Sadana Devendra K. |
分类号 |
H01L31/0376 |
主分类号 |
H01L31/0376 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a photovoltaic device, comprising:
forming a buffer layer between a transparent electrode and a non-crystalline silicon containing p-type layer, the buffer layer including a non-crystalline doped germanium-free silicon base material, wherein the forming of the buffer layer comprises adjusting the deposition power so that a work function of the buffer layer falls within barrier energies of the transparent electrode and the p-type layer; and forming an intrinsic layer and an n-type layer on the p-type layer. |
地址 |
Armonk NY US |