发明名称 BUFFER LAYER FOR HIGH PERFORMING AND LOW LIGHT DEGRADED SOLAR CELLS
摘要 Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.
申请公布号 US2014217408(A1) 申请公布日期 2014.08.07
申请号 US201313760509 申请日期 2013.02.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Hong Augustin J.;Hopstaken Marinus J.;Kim Jeehwan;Ott John A.;Sadana Devendra K.
分类号 H01L31/0376 主分类号 H01L31/0376
代理机构 代理人
主权项 1. A method for forming a photovoltaic device, comprising: forming a buffer layer between a transparent electrode and a non-crystalline silicon containing p-type layer, the buffer layer including a non-crystalline doped germanium-free silicon base material, wherein the forming of the buffer layer comprises adjusting the deposition power so that a work function of the buffer layer falls within barrier energies of the transparent electrode and the p-type layer; and forming an intrinsic layer and an n-type layer on the p-type layer.
地址 Armonk NY US