SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that permits generation of penetration dislocation caused in a single crystal film formed on a substrate and that uses a group III nitride semiconductor with satisfactory light emission characteristics.SOLUTION: A semiconductor light emitting element comprises: n-type semiconductor layers 141 and 142 arranged in layers on a substrate; a light emitting layer of a multiquantum well structure, in which barrier layers 151 and well layers 152 containing In atoms are alternately arranged in layers; and p-type semiconductor layers 160 (161, 162). The light emitting layer comprises: three or more well layers; and four or more barrier layers connected to the n-type semiconductor layers and p-type semiconductor layers while sandwiching them from both sides. Each well layer comprises: a plurality of n-side well layers provided in order from the side close to the n-type semiconductor layers; and one p-side well layer on the side close to the p-type semiconductor layers. The light emitting layer has a V-shaped recessed part 150V formed from recessed inclining faces, which is open on the p-type semiconductor layer side. The concentration of In atoms in the inclining faces of at least one or more n-side well layers is 50% or less than the concentration of In atoms present in the n-side well layers.