INTERDIGITATED ELECTRICAL CONTACTS FOR LOW ELECTRONIC MOBILITY SEMICONDUCTORS

摘要

Structures useful for forming contacts to materials having low charge carrier mobility are described. Methods for their formation and use are also described. These structures include interdigitated electrodes capable of making electrical contact to semiconducting materials having low electron and/or whole mobility. In particular, these structures are useful for organic semiconducting devices made with conducting polymers and small molecules. They are also useful for semiconducting devices made with nanocrystalline semiconductors.

主权项

1. An electrode structure, comprising:
a bottom electrode; a top electrode; and an insulating column operable to insulate the bottom electrode from the top electrode, wherein the insulating column has a height and a width and the height of the insulating column is equal to or less than 200 nm and the width is equal to or less than 100 nm; wherein the top electrode is positioned on a top surface of the insulating column, the insulating column is supported by a substrate, the bottom electrode is positioned on top of the substrate supporting the insulating column, and the bottom electrode does not extend between the insulating column and the substrate.