METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING EMBEDDED ELECTRICAL INTERCONNECTS

摘要

A method for fabricating integrated circuits includes providing a substrate including a protecting layer over an oxide layer and etching a recess through the protecting layer and into the oxide layer. A barrier material is deposited over the substrate to form a barrier layer including a first region in the recess and a second region outside the recess. A conductive material is deposited over the barrier layer and forms an embedded electrical interconnect in the recess and an overburden region outside the recess. The overburden region of the conductive material is removed and a portion of the embedded electrical interconnect is recessed. Thereafter, the barrier layer is etched to remove the second region of the barrier layer and to recess a portion of the first region of the barrier layer. After etching the barrier layer, the protecting layer is removed from the oxide layer.

主权项

1. A method for fabricating an integrated circuit comprising:
providing a substrate including a protecting layer over an oxide layer, wherein the oxide layer has an upper surface defining an oxide layer plane; etching a recess through the protecting layer and into the oxide layer; depositing a barrier material over the substrate to form a barrier layer including a first region in the recess and a second region outside the recess; depositing a conductive material over the barrier layer and forming an embedded electrical interconnect in the recess and an overburden region outside the recess; removing the overburden region of the conductive material; recessing a portion of the embedded electrical interconnect to a recessed surface defining an electrical interconnect plane, wherein the electrical interconnect plane is beneath the oxide layer plane; after recessing the portion of the embedded electrical interconnect, etching the barrier layer to remove the second region of the barrier layer and to recess a portion of the first region of the barrier layer; and after etching the barrier layer, removing the protecting layer from the oxide layer.